kw.\*:("MOS MEMORY")
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ELECTROSTATIC DISCHARGE EFFECTS ON MOS MEMORY ICSNAKAMURA T; KUNITA H; IHARA H et al.1980; NEC RES. DEV.; ISSN 0048-0436; JPN; DA. 1980; VOL. 58; PP. 15-24; BIBL. 2 REF.Article
EBAM-ELECTRON BEAM ADDRESSABLE MEMORIES.SPELIOTIS DE.1976; IN: COMPCON'76 FALL. COMPUT... BY MILLIONS FOR MILLIONS. IEEE COMPUT. SOC. INT. CONF. 13. DIG. PAPERS; WASHINGTON, D.C.; 1976; LONG BEACH, CALIF.; IEEE COMPUTER SOC.; DA. 1976; PP. 329-331; BIBL. 4 REF.Conference Paper
DEVELOPMENT OF MOS MEMORY.1977; RES. DEVELOP. JAP. AWARD. OKOCHI MEMOR. PRIZE; JAP.; DA. 1977; PP. 72-75; BIBL. 3 REF.Article
DES LIGNES D'ALIMENTATION PERFORMANTES: LES BUS-BARRES POUR ALIMENTER LES CARTES-MEMOIRES DYNAMIQUES DES SYSTEMES A MICROPROCESSEURSMELEARD R.1978; ELECTRON. APPL. INDUSTR.; FRA; DA. 1978; NO 251; PP. 13-16Article
PRESENT AND FUTURE TRENCH OF DYNAMIC MOS MEMORIES = TENDANCES D'EVOLUTION ACTUELLE ET FUTURE DES MEMOIRES MOS DYNAMIQUESHOFFMANN K.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 115-119; BIBL. 17 REF.Article
AN UPDATE ON MOS ROMS.HUFFMAN D.1977; COMPUTER DESIGN; U.S.A.; DA. 1977; VOL. 16; NO 9; PP. 95-103; BIBL. 2 REF.Article
ANALYSE DES PARAMETRES D'UN ELEMENT DE MEMOIRE MICROOPTOELECTRONIQUEMIRZOYAN GA.1976; INST. SIST. UPRAVL., TRUDY, TBILISI; S.S.S.R.; DA. 1976; VOL. 15; NO 2; PP. 10-18; ABS. ANGL.; BIBL. 3 REF.Article
VIDEO-TEST-SIGNALGENERATOR MIT FESTWERTSPEICHERN = GENERATEUR DE SIGNAL D'ESSAI VIDEO A MEMOIRES MORTESSWART M.1981; FERNSEH-KINOTECH.; ISSN 0015-0142; DEU; DA. 1981; VOL. 35; NO 3; PP. 102-106; ABS. ENG; BIBL. 4 REF.Article
CIRCUITO INTEGRATO MOS M193 MEMORIA DI PROGRAMMA ELETTRONICA PER RICEVITORI DI TV = MEMOIRE MOS M193 EN CIRCUIT INTEGRE DE PROGRAMME ELECTRONIQUE POUR RECEPTEUR DE TELEVISIONTURRINI A.1979; ANTENNA NUOVA; ITA; DA. 1979; VOL. 51; NO 7-8; PP. 267-272Article
A 64 KBIT MOS DYNAMIC RANDOM ACCESS MEMORYNATORI K; OGURA M; IWAI H et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 482-485; BIBL. 6 REF.Article
CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article
V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article
K RAM-FROM MICROS TO MAINFRAMES.COKER D; DAVIS K.1976; IN: COMPCON'76 FALL. COMPUT... BY MILLIONS FOR MILLIONS. IEEE COMPUT. SOC. INT. CONF. 13. DIG. PAPERS; WASHINGTON, D.C.; 1976; LONG BEACH, CALIF.; IEEE COMPUTER SOC.; DA. 1976; PP. 225-227Conference Paper
USE OF 168/E PROCESSORS AS STAND ALONE COMPUTING FACILITIESROST M.1982; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 0167-5087; NLD; DA. 1982; VOL. 202; NO 3; PP. 445-450; BIBL. 4 REF.Article
DENSE, INTERCHANGEABLE ROMS WORK WITH FAST MICROPROCESSORS.GREENE R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 104-107Article
A THEORETICAL AND EXPERIMENTAL ANALYSIS OF THE BURIED-SOURCE VMOS DYNAMIC RAM CELLJENNE FB; BARNES JJ; RODGERS TJ et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1204-1213; BIBL. 20 REF.Article
EAROMS IN DER PRAXIS = LA PRATIQUE DES MEMOIRES MORTES INTEGREES EFFACABLES ELECTRIQUEMENTMAIER R.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 7; PP. 48-50; BIBL. 2 REF.Article
REAPPRAISING CCD MEMORIES: CAN THEY STAND UP TO RAMS.GOSNEY WM.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 12; PP. 122-126; BIBL. 1 REF.Article
DESIGN FEATURES AND PERFORMANCE OF A 64-KBIT MOS DYNAMIC RANDOM ACCESS MEMORY = CARACTERISTIQUES DE LA STRUCTURE ET PERFORMANCES D'UNE MEMOIRE MOS DYNAMIQUE A ACCES SELECTIF D'UNE CAPACITE DE 64 KILOBITSWEIDLICH R.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 120-126; BIBL. 3 REF.Article
POLYSILICON-LOAD RAMS PLUG INTO MAINFRAMES OR MICROPROCESSORSHUFFMAN D.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 20; PP. 131-139Article
A VERSATILE DATA HANDLING SYSTEM FOR NUCLEAR PHYSICS EXPERIMENTS BASED ON PDP 11/03 MICRO-COMPUTERSDE RAAF AJ.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 163; NO 2-3; PP. 313-324; BIBL. 7 REF.Article
POUR VOS MEMOIRES 4 K: REALISEZ UN CIRCUIT DE COMMANDE ET DE RAFRAICHISSEMENT.CHAUVEL G.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 225; PP. 55-58Article
LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICESCHATTERJEE PK; TAYLOR GW; TASCH AF JR et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 486-498; BIBL. 14 REF.Article
ONE-DIMENSIONAL LOGIC GATE ASSIGNMENT AND INTERVAL GRAPHSOHTSUKI T; MORI H; KUH ES et al.1979; COMPSAC 79. INTERNATIONAL COMPUTER SOFTWARE AND APPLICATIONS CONFERENCE. 3/1979/CHICAGO IL; USA; NEW YORK: IEEE; DA. 1979; PP. 101-106; BIBL. 12 REF.Conference Paper
A 64-KBIT DYNAMIC MOS RAMARAI E; IEDA N.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 3; PP. 333-338; BIBL. 17 REF.Article